摘要
用溶胶凝胶法制备了Ｔｉ１－ｘＶｘＯ２薄膜．用Ｘ射线衍射分析了Ｔｉ１－ｘＶＸＯ２的结晶性能，用Ｌａｍｂｄａ紫外－可见光光度计测量了吸收光谱，用ＺＣ３６高阻仪测量了Ｔｉ１－ｘＶｘＯ２薄膜样品的电性能，结果表明：钒含量的增加导致Ｔｉ１－ｘＶｘＯ２薄膜光学吸收限红移，在形成固溶体后薄膜的电阻率随钒含量增加而下降，在ｘ＝０．１５时，Ｖ２Ｏ５相的出现使Ｔｉ１－ｘＶｘＯ２薄膜的电阻率出现一峰值，Ｔｉ１－ｘＶｘＯ２薄膜电阻率的这种变比规律是由于Ｖ的３ｄ电子的引入和薄膜结晶性的变化．
Titanium-vanadium oxide films have been prepared by the sol-gel method. The effects of vanadium incorporation on the crystallization behavior of TiO2 were investigated by an X-ray diffraction analysis. The optical absorption spectra were measured by a Lambda UV-VIS spectropho- toeter. The electrical properties of the films were studied by measuring their resistance using a ZC36 high resistor. The results showed that the optical absorption edge shifted to the longer wavelength when x increased. The resistance of Ti1-xVxO2 films decreased with increasing x when the solid solution was formed, while it increased when the crystallization of vanadium oxide appeared. The evolution of the resistance can be ascribed to the 3d electrons of vanadium and the crystallization of the films.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2002年第1期51-54,共4页
Chinese Journal of Materials Research
基金
国家自然科学基金59902006
浙江省自然科学基金599070资助项目
