透明导电膜ZnO:Al(ZAO)的组织结构与特性　

MICROSTRUCTURE AND PROPERTIES OF TRANSPARENT CONDUCTIVE OXIDE ZnO:Al(ZAO) THIN FILMS

ＺｎＯ：Ａｌ（ＺＡＯ）是一种简并半导体氧化物薄膜材料，具有高的载流子浓度和大的光学禁带宽 度，因而具有优异的电学和光学性能，极具应用价值．对于其能级高度简并的ＺＡＯ半导体薄膜材料，在 较低的温度下，离化杂质散射占主导地位；在较高的温度下，晶格振动散射将成为主要的散射机制；晶界散 射仅当晶粒尺寸较小（与电子的平均自由程相当）时才起作用， 本文介绍了ＺＡＯ薄膜的制备方法、晶体 结构特性。

ZnO: Al (ZAO)is one of highly degenerate semi-conductive oxide films. Due to both high carrier concentration and large optical band gap, ZnQ:Al has outstanding electrical and optical properties, and is emerging as a most potential alternative candidate for transparent conducting materials. The crystal structure and preparation of Al-doped ZnO films, as well as their electrical and optical properties and corresponding scattering mechanism are summarized in this paper. For highly degenerate ZnO:Al semiconductor thin films, it was revealed that the ionized impurity scattering dominated the hall mobility of films in the low-temperature range; while the lattice vibration became a major scattering mechanism in the high-temperature range. The grain boundary scattering only played a major role in the ZAO films with small grain size (as compared to the electron mean free path). The proposal for the future research is also offered.