摘要
在WO3 中掺入杂质离子 ,制成傍热式厚膜元件 ,结合升温脱附 (TPD)和半导体分析 。
Through analysing the making process of the heating type thick film sensors by mixing the ion doping into WO 3 and combining TPD and semiconductor analysis,the effect of the doping ion on the properties of O 3 sensors is studied.
出处
《传感器技术》
CSCD
北大核心
2002年第4期13-14,17,共3页
Journal of Transducer Technology
关键词
O3气敏元件
升温脱附
掺杂离子
doping ion
O 3 sensors
effect
temperature promoted detaching(TPD)
