摘要
采用MOCVD工艺 ,制备非晶态Bi4 Ti3O12 薄膜 ,然后经过快速退火处理 ,制备高度择优取向的Bi4 Ti3O12 铁电薄膜 ,运用X射线衍射术分析薄膜材料的结构 ,X射线显微分析仪测量薄膜材料的组份 ,并通过电滞回线的测量 ,研究快速退火对Bi4 Ti3O12
MOCVD and RAT were applied to fabricate the amorphous Bi 4Ti 3O 12 ferroelectric thin film on Si<100> substrate,and the phase structure evolution of the films were analyzed with the XRD and SEM techniques.The hysteretic loop of the thin films was measured systematically.The annealing time has great effect on the film ednsification,the combination of grain boundary and ferroelectric properties of BTO thin films.
出处
《微电子技术》
2002年第1期16-19,28,共5页
Microelectronic Technology
