摘要
本文分析了化学机械抛光中影响Φ12 5mm硅抛光片成品率的原因 ,并针对各种缺陷进行工艺研究和探索 。
The cause to influence the yield of 125mm wafer passed chemico mechanical polishing is analyzed in the paper,After research to the process and all kinds of defects,the approach to avoid defects is proposed forward.
出处
《微电子技术》
2002年第1期46-47,54,共3页
Microelectronic Technology
关键词
硅
抛光片
成品率
化学机械抛光
Chemico mechanical polishing
Yield
Defect
Parameters of surface
Cleanliness
