氩离子注入硅表面引起氧化增强效应

Oxidation Enhanced Effect Induced by Argon Ion-Implanted Silicon Surface

实验证实了氩离子注入硅表面后在氧化时引起氧化增强效应;在硅表面注入氩离子后,将注入与非注入样品在温度1000℃的炉体中进行干氧、湿氧生长SiO_2,用膜厚测试仪测二氧化硅层的厚度;结果表明,在相同氧化条件下,氩离子注入样品的氧化层膜厚大于非注入样品的氧化层膜厚度。

Oxidation enhanced effect induced by implanting Ar+ into silicon surface has been experimentally demonstrated. Following Ar+ implantation into Si surface, both implanted and non-implanted samples were put into the furnace at 1000℃ for SiO2 growth with dry- and wet oxygen. Thickness of the SiO2 layers were measured using a film thickness measuring system. It has been shown that the oxide layer for Ar+ implanted sample was thicker than that for non-implanted samples.