摘要
光电子集成电路的未来进步主要取决于Ⅲ-Ⅴ族材料的合成技术,特别是汽相外延和分子束外延技术的持续进展,以及各种材料加工技术的发展。本文将对此作比较详尽的叙述。
The future advancement of optoelectronic integrated circuits lies in the continua-tive development of synthesizing technology,especially the vapour phase epitaxy(VPE) and the molecular beam epitaxy(MBE), for Ⅲ-Ⅴ family materials and of the processing technology for various materials. A detailed description is given for the above.
出处
《微电子学》
CAS
CSCD
1991年第2期31-35,共5页
Microelectronics
关键词
集成电路
半导体材料
工艺
光电子
Optoelectronic Integrated Circuit, Semiconductor Material, Ⅲ-Ⅴ family Semiconductor,Vapour Phase Epitaxy, Molecular Beam Epitaxy, Metal-Organic Chemical Vapour Deposition
