摘要
本文对一些半导体新器件,如HEMT、HBT、超晶格器件、约瑟夫逊器件、三维器件等,的工作原理,器件结构,工艺技术,器件水平和应用前景进行了评述。
An overview is given on some new semiconductor devices, such as HEMT, HBT, superlattice devices, Josephson devices, 3-D devices, in terms of their operation principle, device structures, process technology, state-of-the-art of circuit research and their applications.
出处
《微电子学》
CAS
CSCD
1991年第4期13-27,共15页
Microelectronics
关键词
半导体器件
HEMT器件
HBT器件
HEMT, HBT, Superlatticc devices, Joscphson devices, 3-D devices
