卤素灯快速退火在硅浅结器件中的应用

Application of Rapid Thermal Annealing by Halogon Lamp To Shallow Junction Si Devices

用卤素灯快速退火工艺代替原始的炉退火工艺,使全离子注入的硅双极浅结器件的杂质浓度更高、结深更浅,从而有效地改善了器件的电参数性能。用这种新工艺制做的分频器,工作频率由原来的1300MHz提高到了1600MHz。该工艺操作方便,节省能源,均匀性、重复性、可控性都大大地优于原始炉退火工艺。

Rapid thermal annealing by halogon lamp was used to replace the conventional furnace annealing. With this technology, higher concentration of impurity and shallower junction were obtained for all ion-implanted silicon bipolar devices with shollow junctions, thus improving performance of electrical parameters of the device. Operating frequency of the frequency divider, fabricated using the new process, has increased to 1600MHz from 1300MHz. Easy to handle and energy-saving,this techonlogy is far more superior to the conventional furnace annealing in uniformity, repeatability and controllability.