用5微米工艺设备加工1～2微米窄条的光刻技术

Fabricating 1-2μm Lines Using Equipment of 5μm Capability

本文介绍了利用现有5μm工艺设备进行1～2μm窄条的光刻技术,着重对光刻SiO_2窄条和金属连线方面作了具体的介绍。对优化的“发射区两次错位光刻”和“多晶发射极自对准”工艺技术作了较详细的叙述。

A technique for the fabrication of 1-2μm lines using equipment of capability is described. With this technique, SiO2 lines and metal connections ;are processed. The optimized 'Two Step Emitter Displacement Masking' and 'Polysilicon Emitter Self Alignment' techniques are detailed.