新型高频VDMOS功率器件的研究

A Research Work on High Frequency VDNIOS With a New Structure

作者采用一种新方法设计了可在高压下工作的高频VDMOS器件,该器件具有二级场板终端结构。通过在工艺上利用多晶硅选择氧化形成漏表面厚氧化层,不仅可以有效地减小C_(gd),而且可以减小C_(gs)。该方法简化了器件制作工艺并实现了自对准扩散。

A high frequency VDMOS device with termination structure of a field plate, operating at high voltage, is designed by using a new method. Poly-silicon selective oxidation is used to form, thick oxide films on the surface of the drain region. Both Cgd and Cgs were effectively reduced by using the technique, which also features simple fabrication process and self-alignment.