摘要
本文介绍了MOS型硅功率器件常见的平面结击穿电压的基本理论和提高击穿电压的基本方法以及终端处理技术发展中所面临的课题。
Basic theory on the breakdown voltage of p-n junctions in MOS power devices is described in the paper. Techniques to improve breakdown voltage are introduced and problems concerning junction terminations are also discussed.
出处
《微电子学》
CAS
CSCD
1991年第6期7-13,共7页
Microelectronics
关键词
MOS技术
功率器件
集成电路
硅器件
Breakdown voltage, MOS power device, Termination structure
