低温一次烧结高介电常数晶界层电容器材料

Single-Fired SrTiO_3-Based GBBLC Material with Hign Permittivity

报道了一种在较低温度一次烧结制备的具有高介电常数，较低损耗和良好显微结构的晶界层电容器材料（简称GBBLC）。材料的有效介电常数高达37×10^4，损耗可控制在4％，晶粒5μm左右，△C/C<±3％（20－150℃），频率色散较小，且制备工艺简单。

A SrTiO3-based GBBL capacitor material containing Nb2O5, Bi2O3·3TiO2, LiF, single-fired below 1200℃, was prepared. Its dielectric properties and microstructure were investigated. The results show that εeff-37× 104, tgδ-4%, △C/C<±3%(20-150℃) , grain size d-5μm.