摘要
本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。
Fabrication and research of calibration samples for boron ion implantation into silicon are discussed. Depth profile analysis and comparison of samples are separately conducted by three sets of SIMS instruments and main parameters of samples used for calibration are calibrated.
出处
《微细加工技术》
1991年第1期1-6,共6页
Microfabrication Technology
关键词
离子注入
样品
硼
硅
SIMS
Ion implantation
Boron implantation into silicon
Sample calibration.
