摘要
将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。
Plasma etching is applied to the etching of a-Si. Satisfactory results of flat edge, high resolution, good repeatability and clear figure are obtained. The etching rate can be strictly controlled by adjusting technological conditions. This method has an! advantage over that of chemical hygrocorrosion. The method ' worth spreading and using in the study of a-Si characters and device fabricat
出处
《微细加工技术》
1991年第2期53-56,共4页
Microfabrication Technology
关键词
等离子体刻蚀
非晶硅
Plasma etching
Amorphous silicon.
