摘要
本文报道了借助高剂量离子注入、高温退火等技术获得不同类型SOI(Silicon on Insulator)材料的形成过程及其多层结构。以离子背散射和沟道技术、Auger能谱、透射电子显微镜、扩展电阻测试以及红外透射和反射等分析方法对这些SOI结构进行表征。比较了注O^+和注N^+两种SOI材料的优缺点。研究表明,高质量的SOI材料能够通过离子束合成技术获得。
The formation process and multi-layer structures of various Silicon-on-Insulator (SOI) materials formed by high dose ion implantation, high temperature annealing have been investigated.The analytic methods of Rutherford bac-kscattering and channeling, Auger electron spectroscopy, transmission electron microscopy, spreading resistance test. infrared transmission and reflection spectroscopy have been characterized for SOI structures. The advantages and weaknesses of SIMOX and SIMNI are considered. It is shown that the high quality SOI materials could be produced by ion beam synthesis
出处
《微细加工技术》
1991年第3期43-49,共7页
Microfabrication Technology
