摘要
实验研究发现,采用离子束辅助沉积技术能改进膜层的性能,消除或减小膜层的应力.由实验得到:为保证锗膜具有较好的光学性能和机械性能,基底温度须加热至约150℃;对锗膜比较适合的离子束能量约为150eV;束流密度约为50μA/cm^2.
It is found by experimental study that the processing of ion beam assisted deposition can improve the performances of Ge film, reduce or eliminate the stress in the film. According to the experiments, to ensure good optical and mechanical properties of the film, the temperature of the substrate should be heated up to about 150°C. The suitable energy and current density of ions for Ge film are about 150 eV and 50μA/cm^2, respectively.
出处
《红外研究》
CSCD
北大核心
1989年第5期343-348,共6页
