摘要
Hg_0.73Cd_0.27Te光电导探测器的低频噪声频谱呈1/f关系,测得不同样品的S_v/V^2值随偏置电场变化而变化,说明陷阱效应引起载流子数起伏是主要的低频噪声源,只有表面状态较为理想的样品的S_v/V^2值才接近Hooge关系的计算值,迁移率起伏上升为主要的1/f噪声源.Hooge关系可以作为区分陷阱效应和迁移率起伏两类噪声源的判別标准.
The low frequency noise of Hg_(1-x)Cd_xTe(x=0.27) photoconductors which has 1/f spectrum, is presented. The values of S_v/V^2 of various samples are found to vary with the applied electrical field. These results show that the noise is due to the trapping effect. a_H holds constant (0.002) only while the surface of the sample is perfect. The Hooge formula can be used to discriminate the trapping 1/f noise from the noise due to mobility fluctuation.
出处
《红外研究》
CSCD
北大核心
1989年第5期375-380,共6页
