摘要
基于G-V关系分析了Hg_(1-x)Cd_xTeMIS器件的少数载流子暗电流机制.对于N型Hg_(1-x)Cd_xTeMIS器件,当温度T<130K时,占优势的暗电流机制是通过禁带态的间接隧道电流;而当T>130K时则是耗尽区的产生-复合电流.在低温区,从价带到禁带态的电子热激发限制了间接隧道电流,根据R_0A对温度的依赖关系推算出禁带态位置约在价带顶上面50meV处.在P型样品中,反型层量子化效应强烈地影响少子暗电流的大小.
The mechanism of minority-carrier dark current of Hg_(1-x)Cd_xTe MIS devices is analyaed based on the conductance-voltage characteristics. For N-type Hg_(1-x)Cd_xTe MIS devices, it is revealed that the dominating dark current mechanism for T<130K is the indirect tunneling current via band-gap states and that for T>130K is the generation-ecombination current. In low temperature region, the indirect tunneling current is lmited by electron thermal excitation from valence band to intermediate band-gap states. From the temperature dependence of R_0A, it is derived that the band-gap state is located at about 50meV above the top of the valence band. The inversion layer quantization effect strongly modulates the value of dark current in P-type Hg_(1-x)Cd_xTe.
出处
《红外研究》
CSCD
北大核心
1989年第6期401-408,共8页
