不同In组分及阱宽的InGaAs/GaAs应变量子阱的表面光伏谱

Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well

本文采用表面光伏谱方法，对不同组分及阱宽的ＩｎＧａＡｓ／ＧａＡｓ应变量子阱进行了变温表面光伏谱测量．利用形变势模型理论计算，对样品的表面光伏谱进行指认，理论与实验符合得很好．

In this Article, Surface photovoltage method has been used to measure the photovoltaic effect of strained InGaAs/GaAs quantum well with different composition of In and width of well at different temperature.The transition peaks of PV spectra were identified compared with the theoretical calculation by the kroig-Penny model . The theoretical calculation results agree with the experiment ones.