渐变组分a-Si∶H/a-SiC∶H膜内部电场的研究

Research on Internal Electric Field of Gradual Change Composition a-Si:H/a-SiC:H Film

本文报导了渐变组分 a-Si∶H/a-SiC∶H 膜的制备,研究了渐变膜的电学、光学特性,用 EHT 方法对 a-Si∶H 和 a-SiC∶H 的能态密度进行了计算。提出该渐变膜是一种连续变带隙材料,其内部存在自建电场,并从实验上确定了自建电场的方向。

Preparation of gradual change composition a-Si:H/a-SiC:H film has been re-ported and the characteristics of the film have been analysed.The densities of statesof a-Si:H and a-SiC:H have been calculated by EHT method It is showed.that theenergy gap of the film changes continuously and there is an internal electric fieldestablished by itself in the film.The direction of the internal electric field has beendetermined by our experiments.