IC-218合金再结晶时的晶界迁移

Grain Boundary Migration during Recrystallization in IC-218 Alloy

采用 TEM和 ODF(取向分布函数 )等手段对 IC- 2 18合金再结晶过程中的晶界迁移行为进行了研究 ,发现小角晶界的活动相当活跃 ,而一般大角晶界失去了明显可动性。 TEM观察表明 ,大角晶界的迁移是一个界面前γ′+γ两相“溶解”于界面区 ,然后以不连续沉淀方式重新析出γ′+γ两相的过程 ;另一方面 。

The grain boundary migration during recrystallization in IC 218 alloy was studied by means of TEM and ODF. It was found that the small angle boundary migration plays principal role while the large angle boundary loses mobility. The TEM examination revealed that the migration of large angle boundary involves dissolution of prior phases γ ′ and γ at the migrating boundary and reformation of new phases γ ′ and γ behind them in manner of discontinuous precipitation. On the other hand, the small angle boundary has same dislocation structure as in phase γ .