特征提取在近红外激光检测半导体内微缺陷中的应用

Application of the Characteristic Extraction for the Detection of the Internal Micro Bulk Defects in Semiconducting Materials by Near Infrared Laser Scattering Light Distribution Analyze Technology

提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。在研究广义洛仑兹 米氏理论 (GeneralizedLorenz MieTheory)的基础上 ,通过对理论上散射光强分布的分析 ,近红外激光散射光强分布空间FFT的截止频率被提取为判定半导体材料缺陷大小的判据 ,依据这一判据 ,可以快速的判定微体缺陷的大小。并通过对GaAs样品进行了实验研究 ,证明了该方法和判据的有效性。

A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented. Based on the study of Generalized Lorenz Mie Scattering Theory and the analysis of the theoretical scattering light distribution, the space FFT cut off frequency of the near infrared laser scattering light distribution are extracted as the characteristic value to scale micro bulk defect size. The defect sizes can be quickly judged through the proposed criterion. Experiment on a GaAs sample is done successfully to prove the method and the characteristic value is valid and feasible.