摘要
以Ba3Nd3Ti10O30为基,通过不同量的Nb取代实验,探讨Nb取代对Ba3Nd3Ti10-nNbnO27.5+n/2瓷(n=0～10 mol)(简称BNTN)介电性能和结构的影响.实验结果表明,Nb取代使其?显著提高,并改变??与频率特性.XRD、SEM结构分析可知,主晶相为非填满型钨青铜结构四方晶相.Nb取代产生VA2(Ba)缺位,缺陷结构有利于电子、离子位移极化的发生,晶相极化率增大.显然Nb取代引起这种结构变化是?显著提高的主要机制.
Effect of Nb-replacement on the dielectric properties and structure of Ba3Nd3Ti10-nNbnO27.5+n/2 ceramics (n = 0~10 mol) (BNNT) is investigated by adding different amount of Nb into Ba3Nd3Ti10O30-based ceramics. The results show that Nb-replacement can greatly raise e, and change ae and frequency properties. The results of XRD and SEM show that the main crystal phase is the non-full-filled tetragonal tungsten bronze structure. Nb-replacement can produce the VA2(Ba)defect structure and help the occurrence of electron and ion displacement polarization, which raises the crystal phase polarizability. Obviously, the structural change due to Nb-replacement is the main cause of greatly-raised e.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2002年第3期10-12,共3页
Electronic Components And Materials
关键词
钡钕钛铌瓷
钨青铜结构
缺陷结构
介电常数
铌取代
BNNT ceramics
tungsten bronze structure
Nb replacement
defect structure
dielectric constant
