Au/a-Si:H界面X射线光电子能谱和俄歇电子能谱研究

XPS AND AES STUDY FOR Au/a-Si:H INTERFACE

采用x射线光电子能谱(XPS)和俄歇电子能谱(AES) 对Au/a-Si:H界面进行了研究。实验表明,Au/a-Si:H界面最初形成过程是以金属团生长形式出现,当Au淀积量超过一定值后,Au和Si开始互扩散并进行化学反应,结果形成Au-Si互溶区。利用光发射方法证实,热处理Au/a-Si:H界面导致淀积膜中Si岛形成。

The Au/a-Si:H contact has been investigated by XPS and AES. It is found that the metal cluster occurs, at initial formation process of Au/a-Si:H interface, and after exceeding the critical Au deposition value, the Vinterdiffusion and chemical reaction of Au and Si begin and Au-Si intermixing region is formed. Furthermore, the experimental results of photoemission study confirm that Si islands are formed after annealing the interface of Au/a-Si:H.