KTP晶体中一种特殊缺陷的研究

STUDY ON A SPECIAL DEFECT IN KTP CRYSTAL

研究发现,在KTP晶体中有一特殊的区域,在这一区域内,KTP晶体的倍频效率明显增加,本文借助于透射同步辐射(SR)白光形貌方法,对这一区域进行了研究,发现在这区域内有一面缺陷,在这面缺陷处由于杂质的积累,使晶格发生了微小畸变,从而使KTP晶体的倍频效率增加,并根据消光规律确定了该缺陷的最大应变方向R=<010>。

There is a special area in KTP crystal, in which the SHG efficiency is obviously increased. In this paper, the KTP crystal is studied by means of Synchrotron Radiation (SR) White Beam Topography, and a planar defect is found in such an area. The lattice is deformed because of the accumulation of impurity in this area, which results in the increase of SHG efficiency. The maximum strain direction is determined to be R=〈010〉 according to the extinction condition of planar defect.