Xe原子离子4d→f跃迁光电离截面延迟峰的研究

STUDIES ON DELAYED MAXIMA OF PHOTOIONIZATION CROSS SECTIONS FOR 4d→f TRANSITIONS OF Xe ATOMIC IONS

根据独立电子近似,本文研究了Xe原子离子4d→f跃迁光电离截面延迟峰。阐明了光电离截面延迟峰与对应末态光电子与原子离子实散射增强的关系,以及第二延迟峰与初、末通道量子数亏损差的关系。结果表明:(1)随着电离度的增加,光电离截面延迟峰向低能方向移动,最终消失而呈类氢结构;(2)对Xe离子,初、末通道量子数亏损差的绝对值越小,Cooper极小点的能量越低。

Based on independent electron approximation, we have studied the delayed maxima of photoionization cross section of 4d→f transitions for Xe atomic ions. We illustrate the relations of delayed maxima with the enhancement of corresponding final channel electron collision with the residual atomic ions and relations of secondary delayed maxima with the difference of quantum defects of initial and final states. Our results show: (1) As the degree of ionization increases, the delayed maxima will move towards low energy and finally disappear. (2) for Xe atomic ions, the smaller the absolute value of difference of quantum defects of initial and final states is. the low energy the Cooper minima position is.