GaP和GaAs_(1-x)P_x中N束缚激子压力行为的理论计算

THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs_(1-x)P_x

本文在Koster-Slater单带位势近似下对GaP和GaAs_(1-x)P_x中N等电子中心束缚激子的压力行为与能带结构的关系进行讨论与分析,得到杂质态压力系数的一个近似的解析表达式,并对N和NN_i中心能级的压力关系进行计算。同时,给出NN_i中心配位的一组新的指认。

Using a Koster-Slater one band-one-side approximation, the relationship between the pressure behavior of nitrogen bound excitons and the band structure is investigated in GaP and GaAs1-xP_x. An analytical expression is found to be a good approximation for the pressure coefficient of the deep impurity state. The pressure coefficients of N and NN1 bound exciton states are calculated in GaP and GaAs0.17P0.83. A tentative new assignment which agrees with experiments in both ordering of levels and pressure coefficients is given for nitrogen pair configurations.