摘要
考虑激光照射的半导体方程组 ,在初值 n0 ,p0 ∈L2+( Ω)的条件下 。
In this paper the system arising in semiconductor device simulated by laser beam is considered.The existence of the global weak solutions for the mixed initial-boundary problem is proved under the condition that initial value n-0,p-0∈L+2-+(Ω).
出处
《高校应用数学学报（A辑）》
CSCD
北大核心
2002年第2期145-152,共8页
Applied Mathematics A Journal of Chinese Universities(Ser.A)
