轴流式射频PCVD沉积质量分布的动力学分析

A KINETIC ANALYSIS OF THE DEPOSITION MASS DISTRI-BUTION IN AN AXIAL-FLOW RF PCVD REACTOR

在用静电探针诊断了轴流式射频等离子体激活化学汽相沉积(PCVD)反应器中等离子体电子温度、电子密度轴向分布的基础上,提出与主要工艺参数相联系的二元流体动力学模型。以等离子体参量的轴向分布和变化规律为中介量,从动力学的角度分析主要工艺参数影响PCVD沉积质量分布的规律。将模型用于沉积SnO_2薄膜的过程,理论计算与实验结果符合较好。

On the basis of the diagnostics about the axial distribution of plasma electron temperature and electron density in an axial flow RF PCVD reactor by using electrical probe, a model for two-dimension fluid kinetics concerned with major PCVD parameters is proposed. A kinetic analysis about how deposition profiles are influenced by major PCVD parameters is presented by means of the analysis of plasma parameters. The model has been applied to study the deposition process of SnO2 films obtained from a gases mixture of SnCl4 and O2. The theoretical calculation are in good agreement with the experiments of deposition.