SiH_4激光等离子体内自由基反应动力学研究

A STUDY ON REACTION KINETICS OF THE RADICALS PRODUCED IN THE LASER-INDUCED SILANE PLASMA

本工作采用时间分辨的OES(Optics Emission Spectroscopy)技术, 研究横向激励大气压(TEA)CO_2激光诱发的SiH_4等离子体内碎片反应动力学过程。实验结果表明,等离子体内某些碎片的发光特征谱线主峰位置明显不同。据此,讨论了各碎片的产生及反应过程。比较各碎片发光的持续时间及综合其它OES结果,我们认为SIH_4激光等离子体的最终反应通道为产生Si的通道。

The reaction kinetic processes of species produced in a pulsed TEA CO2 laser induced si-lane plasma were studied with the time-resolved OES. It is showed that the time position of main peaks for different fragments' charactristic lines are appreciably different. The reaction kinetic processes are discussed based on the results. By comparing the time evolution of the lines of the fragments and considering the other results of OES, We infer that the final reaction channel of the laser-induced silane plasma is a Si producing channel.