氮化硅-硅界面陷阱的研究

A study of SiN-Si interface-traps

本文对SiH_4-N_2系PECVD氮化硅-硅界面陷阱进行了研究.结果表明:MNS结构的C-V特性有滞后效应,滞后宽度随测试条件而变化;界面陷阱密度随淀积条件变化。

The SiN-Si interface-traps have been studied. The PECVD SiN films are deposited using the SiH_4 / N_2 gas maxture. The results show that the capacitance-voltage characteristic of the MNS structure is of hysteresis and that the hysteresis width changes with the measuring condition while the interface-traps density changes with the deposition condition.