硅各向异性腐蚀中自动终止技术的研究

An automatic etch-stop technique for anisotropic etching of silicon

本文就 P^+重掺杂硼扩散自动终止腐蚀技术进行了研究,得到了腐蚀速率比随杂质浓度变化的曲线。并用氧化-还原反应理论对实验结果进行了解释。

The automatic etch-stop technique of heavily boron-doped(P^+)is discussed.The ex- perimental curves of the etching rate as a function of the boron concentration are obtained, with the results being explained in terms of oxidation-reduction reactions.