摘要
报导了 5kWGaAs/AlGaAs叠层激光二极管列阵的制作过程和测试结果。通过金属有机物化学气相沉积方法实现分别限制单量子阱结构。 1cm激光条的填充密度是70 %。采用 80个激光条叠层封装 ,激光条间距是 0 5mm ,功率密度达 1 2 5kW /cm2 ,峰值波长是 80 9 0nm ,谱线宽度是 4 8nm。
The fabrication and the test results of 5kW GaAs/AlGaAs stack laser diode arrays are reported The laser structures were grown by metalorganic chemical vapor deposition and employed single quantum well separate confinement heterostructures 1cm monolithic laser bars with a 70% filled factor were used The stack laser diode array comprises 80 bars The power density of 1 25kW/cm 2 have be attained The emitting peak wavelength is 809 0nm and FHWM is 4 8nm
出处
《高技术通讯》
EI
CAS
CSCD
2002年第5期41-44,共4页
Chinese High Technology Letters
