硅MOS结构C-t瞬态分析中产生区宽度的新模型

New generation width model for Si MOS C-t transient analysis

在分析已有的半导体表面产生区宽度模型的基础上 ,提出了可用于产生寿命直接计算且精度较高的产生区宽度新模型 ,它也可以看作是对 Zerbst模型的一种修正 .新模型的标准偏差小于 Pierret模型的标准偏差 .实验数据的分析表明 ,用该模型得到的产生寿命值与

Results of analysis of the existing model of generation width were used to establish this new generation width model, which may be used to directly evaluate the generation lifetime from the capacitance time transient characteristics of an MOS structure. The new model may be considered as a modification of the Zerbst model. It was proved that the standard deviation of the new model is smaller and that the precision of new model is higher than that of the Pierret model. Analyses of the experimental data showed that the generation lifetime evaluated by using the new model essentially agreed with that evaluated by the Rabbani model.