摘要
简述了超快光电导开关的原理 ,分析了提高超快电脉冲时间特性的方法。通过辐照在 Ga As内部引入深能级陷阱 ,并用基于此种材料的光电导开关在实验中获得了上升时间 <2 0 0 ps的超快电脉冲波形。实验表明深能级的引入有利于开关对长波限激光脉冲的吸收。
In this paper the principle of ultra-fast photoconductive switch is described and the method of improving the ultra-fast electric pulse is also discussed. Deep energy traps are introduced by particle beam irradiation in GaAs and a kind of photoconductive switch using these material is made. A current waveform with 200ps rise time is obtained by use of this switch. The experiment indicate that the deep energy trap is benefit to increase the ability of GaAs photoconductive switches absorbing long wavelength limit laser pulse obviously.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2002年第5期40-42,共3页
High Voltage Engineering
基金
国家自然科学基金资助项目 (批准号 :5 0 0 770 17)
