摘要
用射频磁控溅射制备了Ge SiO2 薄膜。在N2 的保护下对薄膜进行了不同温度的退火处理。使用傅里叶变换红外光谱分析 (FTIR)技术 ,X射线衍射谱 (XRD) ,X射线光电子能谱(XPS)分析样品的微结构 ,研究样品在退火中发生的结构、组分的变化。结果表明退火温度对薄膜的结构 ,尤其是薄膜中的GeO含量和GeO晶粒的大小的影响是显著的 。
Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Thermal annealing was performed in a controlled N2 ambience at different temperature. The microstructure was studied by XRD, XPS and FTIR. It was showed that the amount of the GeO and the average size of the Ge nanocrystals were dependent on the annealing temperature.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2002年第3期324-325,331,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目 (698760 4 3)
关键词
退火温度
Ge-SiO2薄膜
结构
溅射
Annealing
Crystal microstructure
Semiconducting germanium
Semiconducting silicon compounds
Sputter deposition
