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镁掺杂对In_2O_3电导和气敏性能的影响 被引量:7

Effect of MgO Doping on the Conductance and Gas-sensing Properties of In_2O_3
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摘要 用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0~ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 . Micro-powder of In2O3 doped with MgO is prepared by chemical coprecipitation, effects of Mg2+ on the conductance and gas-sensing properties of In2O3 was investigated. The results demonstrated that limited solid solution In2-x MgxO3(0less than or equal toxless than or equal to0.40) can be formed between MgO and In2O3. Positive protons produced in the ionization process of MgInx can null the electrons in the conductive gap and this decrease the electrical conductance of the micro-powder significantly. The sensor based on the n(Mg2+) : n (In3+) = 1:2 chemical coprecipitation raw powder sintered at 900degreesC for 4 h, to 45 mumol/L C2H5OH can be 102.5 at 320 similar to 370degreesC. This is twelve times more than that of same concentration petrol.
出处 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2002年第2期157-160,共4页 化学物理学报(英文)
基金 安徽省教育厅自然科学基金资助项目 (2 0 0 1kj183)~~
关键词 掺杂 IN2O3 气敏性能 电导 气敏传感器 二氧化铟 共沉淀法 分析 纳米粉 乙醇 酒精 半导体 Mg2+ In2-xMgxO3 conductance ethanol-sensing sensor
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