一种适于快速OPC的精确光刻胶剖面仿真算法

An Algorithm for Accurate Resist Profile Simulation of Fast OPC

光刻仿真工具是描述实际工艺的有效工具。利用光刻仿真工具 ,能够准确地描述由掩模制造工艺、光刻胶曝光、显影、蚀刻所引起的光学邻近效应和畸变所导致的关键尺寸的变化。利用了改进的空间图像仿真及可变光强阈值模型来获得准确的硅片图形。改进的空间图像的基本思想是 ,用空间图像与一个高斯滤波器进行卷积 ,从而使图像较原来变得模糊 ,以此来模拟光刻胶的实际扩散效应。描述了一种适用于快速光学邻近校正 ( OPC)

Lithography process simulation has been proven to be a useful and effective tool for process characterization Accurate lithography process simulator further enables process engineers to automate the tasks of advanced mask design, verification and inspection in deep submicron semiconductor manufacturing In this paper, a modified aerial image simulation and an intensity variable threshold model are used to obtain accurate images on silicon The basic idea is that the modification to the simulated aerial image can include convolving the aerial image with a Gaussian filter to smear the image in a manner analogous to inhibitor diffusion The algorithm used to characterize the accurate resist profile simulation for fast OPC (optical proximity correction) is also demonstrated