关于硅基片硬质掩膜形成的可行性研究

The Feasibility of Forming Sheet Silicon's Hard Mask by Thermal Oxidation Technology

通过实验对热氧化工艺中的两种不同方法，即干氧氧化和水汽氧化进行了比较研究，证明了利用这种工艺形成硅基片硬质掩膜的可行性.

Two different kinds of thermal oxidation technology—dry-oxygen oxidation and vapor oxidation have been compared through experiment .The results prove the feasibility of forming sheet silicon's hard mask by thermal oxidation technology.