注F^+加固CMOS/SOI材料的抗辐射研究

Study on Anti-ionization Radiation in Injecting F^+ into COMS/SOI Materials

向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。

CMOS/SOI materials are prepared by injecting 170 keV F+ into SiO2 burying layers or Si/SiO2 interface of SIMOX material. The CMOS/SOI materials are radiated with 60Cog radiating device and their I-V characters are measured. The result shows that the anti-ionization radiation performances increase when F+ injected into the burying layers of CMOS/SOI materials. Furthermore, the performances of the material become much stronger when the dose of F+ is 11015cm-2. This is greatly beneficial to CMOS/SOI devices used in ionization radiation environment.