摘要
通过对半导体材料中载流子迁移率的特性分析 ,在原 HPM探测器的基础上 ,提出了探测器中半导体传感器的新设计 ,使探测器的检测灵敏度提高一个量级 ;同时研制成功 S波段 HPM探测器。在传感器的加工方面采用了新的工艺 ,并对电源进行了改进 ,使之功能完善、使用简单、具有实用性。其电源偏压在 4 0 V时 ,X波段的探测器在 6 0 k W时输出检测脉冲信号幅度高达 9V,S波段的探测器在 6 0 0 k W时输出检测脉冲信号幅度高达 10 V,可适用于 10～ 5 0 0 ns脉宽的 HPM功率测量。
A new type detector was presented in this paper, which was developed based on novel sensors and new measuring circuits to achieve good sensitivity and reliability for HPM power measurement. Compared with the previously developed X-band HPM detector, the new X-band detector is characterized by 10 times higher sensitivity and over 9V output signal voltage amplitude at HPM power of 60kW. An S-band HPM detector was developed successfully for the first time. Both detectors can be used for power measuring of HPM whose pulse duration ranges from 10ns to 500ns.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2002年第3期449-452,共4页
High Power Laser and Particle Beams
基金
国家 8 63激光技术领域资助课题 (863 -4 10 -7-4 .1)
