硼预淀积对自组织生长Ge量子点尺寸分布的影响

Effect of boron pre-deposition on size distribution of self-assembled Ge islands fabricated by UHV/CVD

研究了以不同B2H6流量预淀积硼对UHV/CVD自组织生长Ge量子点尺寸分布的影响。在适当的生长条件下,得到了尺寸分布很窄的均匀Ge量子点,用AFM对量子点的形貌进行观察,Ge量子点尺寸的涨落小于±3%,量子点的水平尺寸和高度分别为60nm和10nm,密度为8×109cm-2。实验结果表明,通过预淀积硼表面处理,可以得到尺寸分布很窄的量子点,以满足量子点光电器件方面应用的要求。

The effects of pre-deposition of boron with different B 2 H 6 flux on the self-assembled growth of Ge islands on Si (100)substrate by UHV/CVD are studied by atomic force microscopy(AFM).Quite uniform dome-shaped Ge quantum dots with size and height distribution of less than±3%,which is much more narrow than the size distribution of typical self-assembled Ge dots,are achieved after appropriate boron pre-deposition.The lateral size and height of these dots are60and10nm respectively and the density is about 8×10 9 cm -2 .The experimental results show that method of boron pre-deposition can be used to fabricate Ge quantum dots that are quite uniform meeting the requirements of opto-electronic devices.