摘要
在超高真空系统中 ,用扫描隧道显微镜 (STM)和原子力显微镜 (AFM)研究了自组织生长的 Ge量子点经不同温度退火后的变化 .实验发现 ,当退火温度为 6 30℃时 ,出现了许多新的量子点 .与原来的在分子束外延过程中形成的无失配位错的量子点相比 。
The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) system.When the sample temperature rises to 630℃,a great amount of new dots emerge on the wetting layer,which are believed to be incoherent islands compared with the dislocation free coherent islands formed during molecular beam epitaxy growth.
基金
国家自然科学基金资助项目 (批准号 :1983 40 5 0 )
