摘要
研究了 Si(0 0 1)面偏 [110 ]方向 6°斜切衬底上 Ge量子点的固相外延生长 .实验结果表明 ,在 Si(0 0 1) 6°斜切衬底上固相外延生长 Ge量子点的最佳退火温度为 6 4 0℃ ,在斜切衬底上成岛生长的临界厚度低于在 Si(0 0 1)衬底成岛生长的临界厚度 ,6°斜切衬底上淀积 0 .7nm Ge即可成岛 ,少于 Si(0 0 1)衬底片上 Ge成岛所需的淀积量 .从 Ge量子点的密度随固相外延温度的变化曲线 ,得到 Ge量子点的激活能为 1.9e V,远高于 Si(111)面上固相外延 Ge量子点的激活能 0 .3e V.实验亦发现 ,在 Si(0 0 1)斜切衬底上固相外延生长的 Ge量子点较 Si(0 0 1)
Ge quantum dots growth on vicinal Si(001) substrate by solid phase epitaxy is described.The optimum temperature for solid phase epitaxy is found to be 640℃.It is also found that the critical thickness for Ge islanding growth is smaller on vicinal Si(001) substrate than that on Si(001) substrate.The activation energy of Ge quantum dots growth on vicinal Si(001) substrate is estimated to be 1 9eV,which is much larger than that 0 3eV on Si(111) substrate.The quantum dots growth on vicinal Si(001) substrate by solid phase epitaxy shows a high thermal stability.
