摘要
由于易与读出电路集成在一起 ,硅基红外探测器成为一研究热点 .文章评述了近年来取得较大进展的几种硅基红外探测器 ,主要包括非本征硅 ,GexSi1-x/Si异质结 ,PtSi及Si基HgCdTe红外探测器件 .
There is currently a major effort in studing silicon based infrared detector because of their unique properties and compatible with Si integrated circuit. In the paper, we introduced the recent development in the infrared detectors of silicon based including extrinsic silicon, Ge\-\%x\%Si\-\{1-\%x\%\}/Si heterojunction, PtSi schottky\|barrier and HgCdTe.
出处
《物理与工程》
2002年第3期39-41,58,共4页
Physics and Engineering
