铱掺杂溴化银微晶的瞬态光电导研究

STUDY OF TRANSIENT PHOTOCONDUCTIVITY OF IRIDIUM DOPED SILVER BROMIDE MICROCRYSTAL

研究在 77K时 ,铱掺杂溴化银微晶瞬态光电导 (TPC)的信号强度和衰减时间与铱掺杂浓度间的关系。在溴化银微晶的制备过程中 ,Ir Cl3 -6作为掺杂剂加入 ,使溴化银微晶中的部分银离子所占据的晶格位被铱离子取代 ,在溴化银晶体中同时引入新的电子陷阱与空穴陷阱 ,增强了内部的电子空穴复合 ,使

The signal height and decay time of the transient photoconductivity(TPC) as the function of the iridium dopant concentration are studied at 77K. IrCl 3- 6 as dopant is added when silver bromide is precipitated. The iridium ions can be built into silver bromide lattice and substitutionally on the cation lattice sites. The electron traps and hole traps are introduced simultaneously,so that the internal recombination is reinforced. It is found that the signal height of TPC is reduced with the increase of iridium dopant concentration.