摘要
阐述了 Thomas- Fermi- Dirac- Cheng电子理论的位错形成机制。通过对系统总能量的分析提出了位错能够存在的判据 。
Mechanism underlying the formation of dislocation is expounded on Thomas-Fermi-Dirac-Cheng(TFDC) electron theory. The criterion condition on the limit size of dislocation is raised, and the calculated results of the limit sizes of a set of elements are given.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2002年第2期81-83,共3页
Rare Metal Materials and Engineering
