Si—nipi超晶格电子结构温度效应的研究

Investigation of Temperature Effect on Electronic Structure for Si-nipi Doping Superlattice

我们计算了电子结构和其它的物理参数,对温度是很好地自洽的。用各向异性有效质量及局域密度泛函近似为框架,我们发现对电子亚带和有效带能隙的影响是明显的。

We have Calculated the electronic structure and other physical parameters which vary with temperature by self-Consistence, Using antisotropic effective mass, in the framework of local-density functional approximation. We found influence of temperature on electronic subband and effective band gap is obvious.