摘要
分析了W 型单模单偏振光纤中 ,椭圆内包层硼掺杂量与单模单偏振带宽的关系 ,得出了长W 型单模单偏振光纤的带宽与内包层硼掺杂量的大小无关 ,它只由光纤几何结构以及内包层折射率深度确定 ,而对于短W 型单模单偏振光纤 ,硼掺杂量的增加可以增大截止基模能量损耗 ,从而适度提高其消光比和有效带宽。
Relationship between boron-doped content and single polarization single mode band-width of W-tunneling optical fiber is analysed. The band-width is independent of the boron-doped content and is determined only by the profile structure and refractive index depth of the inner cladding if the fiber is long enough. For short W-tunneling optical fiber, increasing of boron doped content can raise leakage losses of the fundamental modes below cut-off. It can enhance extinction ratio and effectiveness of band-width of the fiber to some extent.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2002年第1期52-56,共5页
Chinese Journal of Lasers
基金
云南省自然科学基金 (编号 :1999F0 0 0 2R)资助项目
关键词
W-型单模单偏振光纤
硼掺杂量
带宽
折射率
Bandwidth
Boron
Doping (additives)
Light polarization
Refractive index